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Cubic Boron Arsenide (cBAs): a Promising Semiconductor for Next Gen Electronics

May 28 @ 6:00 pm - 7:02 pm EDT

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Cubic boron arsenide (c-BAs) is an indirect bandgap (1.82 eV) semiconductor, it has a similar band structure as silicon, but its thermal conductivity is 10 times higher and its carrier mobility is three times larger at room temperature. This suitable bandgap, simultaneous high thermal conductivity and high carrier mobility have made c-BAs a promising material for next generation electronics, especially after recent experimental verifications of these excellent thermal and electronic properties. However, many challenges still remain in order for c-BAs to realize its many promises. Besides the challenge of synthesis of uniform large size c-BAs crystals, techniques that can rapidly characterize and screen high quality c-BAs are still lacking. In this talk, I will first give a brief introduction to the history and basic properties of c-BAs, I will then explain its next-only-to-diamond high thermal conductivity. After that, I will show optical techniques that have been developed to measure thermal conductivity and carrier mobility. Finally I will show photoluminescence and Raman spectra of c-BAs, and discuss the challenges of using them to identify and characterize high quality c-BAs.
Co-sponsored by: Gordon Burkhead
Speaker(s): Jiming Bao,
Agenda:
6:00 PM – Start of online/virtual event. Local chapter and Section updates, introductions, etc.
6:05 PM – Start of Distinguished Lecture
6:55 PM – Formal End of Lecture, Start of Q&A – Discussions
7:15 PM – Formal end of event, Vote of thanks to the Speaker….
Virtual: https://events.vtools.ieee.org/m/417886